#Germanium transistor professional

+ Energy gap for temperature effect on IS is 1.11 (check if wanting to simulate temperature effects)

+ Si leakage for cheap small signal devices may be ise=20p isc=10p (data for a 2N2222A) 5u for a leaky AC128s, OCs, 0.02u for quality Soviet GTs, Japanese 2SBs) + Adjust according to the particular device (e.g. + This value gives 60uA at 9V in the circuit decribes in 'Technology of the Fuzzface' at + Leakage current (Isc) is much higher for Ge than for Si. + increased Ne and Nc (ideal diodes have N=1, very poor ones have N >1) + data for VAF from Ic vs VBE curves for an AC128, taking average of Ib=200uA (VAF=40) and Ib=400uA (VAF=80) + Ge devices have low early voltage (VAF=60 V rather than 100 or 1000 V) + Both coefficients are set larger than for Si devices (where typically Xti=3 and Xtb=1.5) + temperature coefficients for effects on Is (Xti) and Beta (Xtb). + set to higher value for higher current devices + assumes a low current early Germanium device such as an AC128 + Beta falls off above 20 mA (Ikf=current at upper 'knee' in Beta) + 80 to 200 for later high quality devices. + 40 to 80 is typical of many early audio devices. Although I've called it AC128, it is generic. I've got a basic PNP Germanium device model here. I've been doing some research and simulations. In the meantime, any help or feedback will be greatly appreciated. I'm not familiar with several parameters, so it will take me a while to research them and get back with some models. I'd use at least 0.26 V and less than 0.3 V (so 0.28 V seems logical).

Because this can be an important parameter, this might be one where some accuracy would help. We usually assume that the voltage drop for Germanium is 0.3 V. Would 50pF be more in the ballpark? (Gus once told us that early Ge audio transistors had high capacitance and low Ft) Also, Vje and Vjc (the forward voltage drop on the junctions) are a bit too low at 0.2 V. Cjc (B-C capacitance) seems low at 9.728 pF (and why are there 3 decimal places doing there on a parameter that probably varies by several pF). So I'd nudge Br up to at least 10 (maybe 20 or 30 ?). The parameters that I feel are a bit dodgy include Br (reverse hFE=4.977), which my experience tells me is often as much as half of the forward hFE (Bf=70). No Leakage above 0.20! **Audio Demo** below shows these exact higher gain PNP Silicon Transistors in our PUFF circuit.This is a great start for me.

Transistor brand and type will vary based on my personal supply (typically 2N404, 2N1303, 2N1305, 2N1309 or similar). This is an incredible find at an incredible price! You will be sent transistors picked at random from my lot box. Now you can get High Gain Germanium transistors and enjoy all the benefits of High Gain with real Germanium transistors. The JH2 from Dunlop used the MPSA18, with a typical gain of 900. These were High Gain Silicon devices measuring 500 hFE. There were several versions with the BC108C and BC109C. Note: The Fuzz Face was built with many transistor types throughout the 60’s and 70’s, 80’s and 90’s. These transistors will have an hFE rating between 225 and 350.

#Germanium transistor professional

I have personally hand tested and individually marked each package using professional grade equipment. These will work great in our Rangemaster (PURP), Fuzz Face (PUFF), Tonebender (PUTB), Fuzzy Bee, Industrial Fuzz and many others. Each one is hand tested and the hFE will be written on each transistor package. These “high gain” hFE transistors sound great and have extremely low to no leakage. Germanium transistors are very scarce and my source is extremely limited. – USA only due to package thickness rules. Description Now shipping to USA, Canada & Europe Genuine Germanium Transistor N.O.S.